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DDR SDRAM

Double-Data-Rate (DDR) is making strong inroads into the computing,
telecom and consumer markets. The new DRAM architecture is a very
powerful, high performace continuation of the Synchronous DRAMs PC66,
PC100 and PC133.
DDR SDRAMs are transfering data on both edges
of the clock, so that a DDR SDRAM clocked at 100 MHz will offer
a burst rate of 200 Mbit/s or a peak bandwidth of more than 1.Gbytes/s
in an 8-byte application. Likwise, clocking at 133MHz will result
in a peak bandwidth of 2.1 Gbytes/s. Available in PC266 and PC333.
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| Features |
- 184-pin Dual in-line memory modules (DIMM)
- VDD=+2.5V 0.2V, VDDQ= +2.5V+-0.2V
- 2.5V I/O (SSTL-2 compatible)
- Commands entered on each positive CK edge
- DQS edge-aligned with data for READs; center-aligned
with data for WRTIEs
- Internal, piplined double data rate (DDR) architechture;
2 data accesses per clock cycle
- Auto Refresh (CBR) and Self Refresh
- Bidirectional data strobe (DQS) transmitted/received
with data i.e., source-synchronous data capture
- Differential clock inputs (CKO and CKO#)
- 4 internal banks for concurrent operation
- Available in 128/256/512 MB module package
- Programmable burst lengths:2,4 or 8
- Auto Precharge option
- 15 ms maximum average periodic refresh interval
- TSOP66 Package
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Download DDR Compatibility List (14
kB)
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